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BLF245

NXP VHF power MOS transistor BLF245

FEATURES
· High power gain
· Low noise figure
· Easy power control
· Good thermal stability
· Withstands full load mismatch.

DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123A flange package,
with a ceramic cap. All leads are
isolated from the flange.
Matched gate-source voltage (VGS)
groups are available on request.