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L2821

POLYFET射頻功放管L2821

General Description
Vds = 12.5
Ids = A, Vgs = Vds
A
η
dB
%
o o o o
o
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances,
resulting in high F transistors with high
input impedance and high efficiency.