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RD30HVF1

MITSUBISHISilicon RF Power MOS FET  RD30HVF1

DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.

High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
High Efficiency: 60%typ.

For output stage of high power amplifiers in VHF band
Mobile radio sets.

RD30HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.