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7W, 28V, 20MHz-6GHz, GaN RF Power Transistor. The TriQuint T1G6000528-Q3 is a 9 W (P3dB) discrete GaN on SiC HEMT which operates from 20 MHz to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint's proven 0.25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.